Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Title
Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 13, Pages 132107
Publisher
AIP Publishing
Online
2010-09-28
DOI
10.1063/1.3494084

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now