Vapor-phase growth and characterization of Mo1−xWxS2(0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys

(2013) Yanfeng Chen et al.   ACS Nano

Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers

(2013) Ana Laura Elías et al.   ACS Nano

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

An innovative way of etching MoS2: Characterization and mechanistic investigation

(2013) Yuan Huang et al.   Nano Research

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

(2013) Sina Najmaei et al.   NATURE MATERIALS

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2

(2013) Sanfeng Wu et al.   Nature Physics

Morphology and atomic-scale structure of single-layer WS2 nanoclusters

(2013) Henrik G. Füchtbauer et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Liquid Exfoliation of Layered Materials

(2013) V. Nicolosi et al.   SCIENCE

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties

(2012) Hannu-Pekka Komsa et al.   Journal of Physical Chemistry Letters

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor

(2012) A. Castellanos-Gomez et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

(2012) Yu-Chuan Lin et al.   Nanoscale

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Electrical control of optical properties of monolayer MoS2

(2012) A.K.M. Newaz et al.   SOLID STATE COMMUNICATIONS

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Atomic Resolution Imaging and Topography of Boron Nitride Sheets Produced by Chemical Exfoliation

(2010) Jamie H. Warner et al.   ACS Nano

The electron affinity of tungsten

(2010) A. O. Lindahl et al.   EUROPEAN PHYSICAL JOURNAL D

XPS studies of the surface of nanocrystalline tungsten disulfide

(2010) A.P. Shpak et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS