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Title
Effect of Si doping on the electronic properties of BN monolayer
Authors
Keywords
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Journal
Nanoscale
Volume 6, Issue 10, Pages 5526-5531
Publisher
Royal Society of Chemistry (RSC)
Online
2014-02-24
DOI
10.1039/c4nr00159a
References
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Related references
Note: Only part of the references are listed.- h-BN Monolayer on the Ni(111) Surface: A Potential Catalyst for Oxidation
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- Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices
- (2012) Michael S. Bresnehan et al. ACS Nano
- Binary and Ternary Atomic Layers Built from Carbon, Boron, and Nitrogen
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- (2012) Jie Li et al. CHEMICAL PHYSICS LETTERS
- Formaldehyde adsorption on pristine, Al-doped and mono-vacancy defected boron nitride nanosheets: A first principles study
- (2012) Siamak Noorizadeh et al. COMPUTATIONAL MATERIALS SCIENCE
- Artificially Stacked Atomic Layers: Toward New van der Waals Solids
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- (2012) Xiaoliang Zhong et al. Nanoscale
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- Direct Determination of the Chemical Bonding of Individual Impurities in Graphene
- (2012) Wu Zhou et al. PHYSICAL REVIEW LETTERS
- Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
- (2011) Gwan-Hyoung Lee et al. APPLIED PHYSICS LETTERS
- Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
- (2011) J. Ying et al. JOURNAL OF APPLIED PHYSICS
- Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)
- (2011) Fabrizio Orlando et al. Journal of Physical Chemistry C
- Electronic structure of defects in a boron nitride monolayer
- (2009) S. Azevedo et al. EUROPEAN PHYSICAL JOURNAL B
- Electronic Structure of Si-Doped BN Nanotubes Using X-ray Photoelectron Spectroscopy and First-Principles Calculation
- (2008) Yong Jae Cho et al. CHEMISTRY OF MATERIALS
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