High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

(2011) Zhibo Yan et al.   ADVANCED MATERIALS

Effects of metal contacts and dopants on the performance of ZnO-based memristive devices

(2011) Julia Qiu et al.   JOURNAL OF APPLIED PHYSICS

Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

(2011) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

(2011) Wan Gee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Intrinsic Mechanisms of Memristive Switching

(2011) Kazuki Nagashima et al.   NANO LETTERS

Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories

(2011) Wenzhuo Wu et al.   NANO LETTERS

Nonvolatile resistive switching in single crystalline ZnO nanowires

(2011) Yuchao Yang et al.   Nanoscale

Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

(2011) H. J. Wang et al.   Physica Status Solidi-Rapid Research Letters

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Evolution of resistive switching over bias duration of single Ag2S nanowires

(2010) Zhi-Min Liao et al.   APPLIED PHYSICS LETTERS

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

(2010) Seunghyup Lee et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

(2010) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Dispersion improvement of unipolar resistive switching Ni/CuxO/Cu device by bipolar operation method

(2010) Chih-Yi Liu et al.   MICROELECTRONIC ENGINEERING

Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

(2010) Kazuki Nagashima et al.   NANO LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating

(2010) Yu Chao Yang et al.   NEW JOURNAL OF PHYSICS

Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

(2009) Edward D. Herderick et al.   APPLIED PHYSICS LETTERS

Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

(2009) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE