High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires
出版年份 2012 全文链接
标题
High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires
作者
关键词
-
出版物
Nanoscale
Volume 4, Issue 8, Pages 2571
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-02-29
DOI
10.1039/c2nr30133d
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
- (2011) Zhibo Yan et al. ADVANCED MATERIALS
- Effects of metal contacts and dopants on the performance of ZnO-based memristive devices
- (2011) Julia Qiu et al. JOURNAL OF APPLIED PHYSICS
- Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO
- (2011) Keisuke Oka et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2
- (2011) Wan Gee Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Intrinsic Mechanisms of Memristive Switching
- (2011) Kazuki Nagashima et al. NANO LETTERS
- Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories
- (2011) Wenzhuo Wu et al. NANO LETTERS
- Nonvolatile resistive switching in single crystalline ZnO nanowires
- (2011) Yuchao Yang et al. Nanoscale
- Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks
- (2011) H. J. Wang et al. Physica Status Solidi-Rapid Research Letters
- Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
- (2010) Hu Young Jeong et al. ADVANCED FUNCTIONAL MATERIALS
- Resistive switching behaviors of ZnO nanorod layers
- (2010) APPLIED PHYSICS LETTERS
- Evolution of resistive switching over bias duration of single Ag2S nanowires
- (2010) Zhi-Min Liao et al. APPLIED PHYSICS LETTERS
- Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
- (2010) Seunghyup Lee et al. JOURNAL OF APPLIED PHYSICS
- Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
- (2010) L. Goux et al. JOURNAL OF APPLIED PHYSICS
- Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
- (2010) Keisuke Oka et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Dispersion improvement of unipolar resistive switching Ni/CuxO/Cu device by bipolar operation method
- (2010) Chih-Yi Liu et al. MICROELECTRONIC ENGINEERING
- Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
- (2010) Kazuki Nagashima et al. NANO LETTERS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating
- (2010) Yu Chao Yang et al. NEW JOURNAL OF PHYSICS
- Bipolar resistive switching in individual Au–NiO–Au segmented nanowires
- (2009) Edward D. Herderick et al. APPLIED PHYSICS LETTERS
- Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
- (2009) Keisuke Oka et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
- (2009) S. H. Chang et al. PHYSICAL REVIEW LETTERS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started