Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
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Title
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Authors
Keywords
photodetector, gallium telluride, two-dimensional, semiconductor, nanosheet
Journal
Nano Research
Volume 7, Issue 5, Pages 694-703
Publisher
Springer Nature
Online
2014-04-23
DOI
10.1007/s12274-014-0430-2
References
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