Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
出版年份 2014 全文链接
标题
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
作者
关键词
photodetector, gallium telluride, two-dimensional, semiconductor, nanosheet
出版物
Nano Research
Volume 7, Issue 5, Pages 694-703
出版商
Springer Nature
发表日期
2014-04-23
DOI
10.1007/s12274-014-0430-2
参考文献
相关参考文献
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