Source and Drain Contacts for Germanium and III–V FETs for Digital Logic

Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction

(2009) Tomonori Nishimura et al.   Applied Physics Express

Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

(2009) R. Dormaier et al.   JOURNAL OF APPLIED PHYSICS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

(2008) T. D. Lin et al.   APPLIED PHYSICS LETTERS

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

(2008) Ying-Ying Zhang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants

(2008) G. Hellings et al.   IEEE ELECTRON DEVICE LETTERS

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

(2008) J. B. BOOS et al.   IEICE TRANSACTIONS ON ELECTRONICS

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

(2008) Li-Yang Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Selective Deposition of Ohmic Contacts to p-InGaAs by Electroless Plating

(2008) E. M. Lysczek et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

(2008) Peter Broqvist et al.   PHYSICAL REVIEW B

Observation and Suppression of Nickel Germanide Overgrowth on Germanium Substrates with Patterned SiO[sub 2] Structures

(2007) D. P. Brunco et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS