Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

Title
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Authors
Keywords
-
Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 1, Pages H18
Publisher
The Electrochemical Society
Online
2008-11-13
DOI
10.1149/1.3006319

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