Article
Engineering, Electrical & Electronic
Tomasz Kulej, Fabian Khateb, Daniel Arbet, Viera Stopjakova
Summary: This brief presents a new solution for an ultra-low-voltage linear operational transconductance amplifier (OTA) that provides a highly linear DC transfer characteristic with no extra power consumption.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2022)
Article
Engineering, Electrical & Electronic
Goncalo Almeida, Zhaochu Yang, Tao Dong, Paulo Mendes, Yumei Wen, Ping Li
Summary: This paper presents a current starved voltage-controlled oscillator (VCO) based on the standard 0.13-mu m CMOS process, incorporating a power management circuit (PMC) to generate an average periodic signal at 84.81 kHz. A voltage reference is implemented to ensure stable periodic signal output, utilizing subthreshold and deep triode MOSFETs. The proposed architecture achieves a linear sensitivity of 0.49%/V and a power consumption of 3.546 mu W at 3 V supply voltage, suitable for a time-control local oscillator in vibration energy harvesters.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Computer Science, Information Systems
Andrea Boni, Michele Caselli, Alessandro Magnanini, Matteo Tonelli
Summary: This paper presents the design and implementation of electronic interfaces and acquisition circuits for typical high-voltage signals in an automotive context. The novel co-design of voltage clamps and electro-static discharge (ESD) protections achieves on-chip high-voltage compatibility while minimizing off-chip components.
Article
Engineering, Electrical & Electronic
Shuang Li, Yang Wang, Hongke Tao, Qing Liu, Zhiwen Zeng, Xiangliang Jin, Hongjiao Yang
Summary: A new power-rail electrostatic discharge (ESD) clamp circuit based on the 0.18 μm CMOS process is proposed. The circuit adjusts the voltage biased to the gate of the big clamp NMOS (M-big) by modifying the width of a MOS transistor, and a feedback path is designed to prolong the response time of Mbig. Simulation and test results demonstrate that the proposed circuit achieves a steady state bias voltage for M-big and has a longer response time, effectively reducing damage to the gate oxide layer caused by voltage overshoot. The circuit also exhibits higher trigger voltage, lower on-resistance, and better robustness compared to conventional circuits.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Analytical
Boyang Ma, Shupeng Chen, Shulong Wang, Lingli Qian, Zeen Han, Wei Huang, Xiaojun Fu, Hongxia Liu
Summary: A power clamp circuit with good immunity to false triggering is proposed in this paper, which can handle fast power-on conditions with a 20 ns rising edge. The circuit uses a separate detection component and an on-time control component to distinguish between electrostatic discharge (ESD) events and fast power-on events. Instead of using large resistors or capacitors, the circuit utilizes a capacitive voltage-biased p-channel MOSFET in the on-time control part, which can serve as a large equivalent resistance. The proposed circuit offers several advantages such as area savings, fast recovery from false triggers, and clean dissipation of ESD energy.
Article
Chemistry, Multidisciplinary
Jeong-Geun Kim, Donghyun Baek
Summary: This paper presents a Ku-band transmit and receive IC in 0.13μm CMOS technology for mobile satellite communication beamforming systems. The IC includes a bi-directional amplifier, a 6-bit phase shifter, and a 6-bit digital step attenuator. Precise trimming bits are implemented for amplitude and phase error correction. The IC achieves a wide phase variation range, attenuation range, and high return losses.
APPLIED SCIENCES-BASEL
(2022)
Article
Engineering, Electrical & Electronic
Lisheng Chen, Lang Chen, He Zhu, Roberto Gomez-Garcia, Xi Zhu
Summary: This work presents a wideband millimeter-wave power amplifier (PA) with excellent impedance matching, high output power, and high power-added efficiency (PAE) using a balanced amplifier-based architecture. An edge-coupled quadrature coupler is designed as the RF-power-division/combination block, maintaining good magnitude/phase balance error performance over a wide bandwidth. The fabricated PA prototype demonstrates small-signal gain variation within 3 dB from 20-40 GHz, delivering at least 15.8 dBm saturated output power with peak PAE higher than 16.8%.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
Review
Engineering, Electrical & Electronic
M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinets, A. S. Dzurak
Summary: This article discusses the scaling prospects of quantum computing systems based on silicon spin technology and how different layers of such a computer could benefit from using complementary metal-oxide-semiconductor (CMOS) technology. The potential of leveraging CMOS expertise in addressing the scaling challenges at a system level is highlighted.
NATURE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Jiacheng Guo, Yizhu Shen, Kai Ye, Sanming Hu
Summary: This communication presents a differential retrodirective array (RDA) with circular polarization for real-time tracking. The RDA, enabled by specifically designed low-cost CMOS chips, has a large beamwidth and is suitable for tracking free moving targets.
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION
(2022)
Article
Optics
Yaxuan Liu, Ling Tong, Jingye Sun, Yuan Fang, Tao Deng
Summary: This letter presents a new photodetector based on a metal-oxide-semiconductor field-effect transistor with a grating-gate structure. The photodetector was fabricated using the standard 0.8-μm complementary metal-oxide-semiconductor process. By utilizing a periodic slit structure, the channel is generated and exposed on the shallow surface, leading to more efficient transmission and absorption of incident light through the surface plasmon resonance effect. Experimental results demonstrate a high responsivity (R-v) exceeding 100 A/W in the visible and near-infrared spectra at room temperature. The photodetector also achieves a minimum noise equivalent power of 8.2 fW/Hz(0.5) at 15 Hz and a maximum detectivity (D*) of 1.7 x 10(12) Jones. It is expected that this photodetector will find wide applications in communication or imaging systems.
Article
Engineering, Electrical & Electronic
Wei-Chun Hung, Yu-Fa Tu, Ting-Chang Chang, Mao-Chou Tai, Yung-Fang Tan, Kuan-Hsu Chen, Chien-Hung Yeh, Hong-Yi Tu, Hung-Ming Kuo
Summary: This study investigates abnormal on-current degradation in n-type LDMOS after NCS, attributing the degradation to electron injection into the IL during stress. Experimental data and TACD simulations confirm that the degradation is induced by CFP after NCS.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Fortunato Frazzica, Toshio Yasue, Annachiara Spagnolo, David San Segundo Bello, Maarten De Bock, Jan Craninckx, Piet Wambacq
Summary: This paper introduces a 12-bit, low-power analog-to-digital converter for column readout of image sensors. The ADC achieves high performance under an oversampling ratio of 8 while consuming low power, demonstrating good performance in a low-power setting.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Lisheng Chen, He Zhu, Roberto Gomez-Garcia, Xi Zhu
Summary: The letter introduces a compact electromagnetic structure for designing miniaturized notch filters in standard silicon technology, achieving sharp selectivity and large notch attenuation depth through strong coupling and significantly reducing the physical footprint. A simplified lossless behavioral model and EM simulations were used to demonstrate the proposed principle of notch filter.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Kaan Balaban, Mehmet Kaynak, Ahmet Cagri Ulusoy
Summary: This letter presents the design and experimental characterization of a highly efficient WR3.4-band power amplifier (PA) using 0.13-mu m SiGe technology. The realized differential cascode PA demonstrates a high efficiency, owing to the gm-boosting technique which enables a relatively higher small-signal gain per stage. The proposed PA exhibits a saturated output power of 10.48 dBm with a maximum power-added-efficiency (PAE) of 5.46% at 240 GHz, which is a leading-edge performance among the reported silicon (Si)-based WR3.4-band PAs. The small-signal gain peaks at 24.1 dB and the PA has a 3-dB bandwidth of 21 GHz.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yiqun Liu, Kai-Da Xu
Summary: A novel on-chip dual-mode resonator (OCDMR) is proposed for the design of millimeter-wave (mm-wave) bandpass filters (BPFs). The proposed OCDMR consists of a stub-loaded metallic line and two identical open-end lines for coupling. The resonant frequencies of OCDMR can be adjusted by changing geometric parameters. Three different on-chip mm-wave BPFs with multiple transmission zeros (TZs) are designed and fabricated using the proposed OCDMRs, validating its feasibility for on-chip mm-wave BPF applications.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2023)
Article
Engineering, Electrical & Electronic
Zhiqiang Wang, Siyang Dai, Yao Zhao, Guofeng Li, Bing Ji, Volker Pickert, Bowen Gu, Shuai Ding
Summary: This paper proposes a lumped-charge model for IEGT single chip, considering the effect of carrier injection enhancement in the emitter. The parasitic inductance of the parallel branches in PP-IEGT is extracted using Ansys simulation, and the validity of Ansys simulation is verified. Furthermore, the switching inconsistency is evaluated by combining the electrical model and the effect of mutual inductance, and it is found that mutual inductance is an important factor influencing electrical parameter distribution.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Sankha Subhra Ghosh, Surajit Chattopadhyay, Arabinda Das, Nageswara Rao Medikondu, Abdulkarem H. M. Almawgani, Adam R. H. Alhawari, Sudipta Das
Summary: This article describes a method for identifying the IGBT switch breakdown failure in a 3-phase, 3-level Voltage Source Converter linked to the photovoltaic grid. Comparative learning has been used to detect the specific parameter suitable for the detection of the failure.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Milad Khajehvand, Henri Seppanen, Panthea Sepehrband
Summary: Using SEM/EDX analysis, microscale fracture at the bond-pad is detected during the wedge bonding process of Cu wire to a Cu or Al substrate. It is observed that the fracture of the bond leads to the formation of a bulge on the wire and a cavity in the substrate, causing fracture in the original substrate. 3D optical profiler reveals that the depth, radius, and surface area of the cavity increase with bond time for a constant bond force and power. These metrics are suggested as new factors for optimizing the wedge bonding process. The optimal bonding parameters should maximize the cavity's surface area (related to bond's pull force) while minimizing the cavity's depth relative to the substrate's thickness to avoid substrate damage. Furthermore, Molecular Dynamics simulations propose a potential plastic deformation mechanism for bond-pad damage, suggesting the benefits of using a small-grain-sized substrate, low transducer's vibration amplitude, and high transducer's frequency to minimize the cavity's depth.
MICROELECTRONICS RELIABILITY
(2024)
