Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

(2015) Stephen W Kaun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

(2014) Erin C. H. Kyle et al.   JOURNAL OF APPLIED PHYSICS

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

(2012) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

(2012) A. L. Corrion et al.   JOURNAL OF APPLIED PHYSICS

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

(2010) S J Chung et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrical and optical properties of p-type InGaN

(2009) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

High doping level in Mg-doped GaN layers grown at low temperature

(2008) A. Dussaigne et al.   JOURNAL OF APPLIED PHYSICS