Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/5/055010
Keywords
molecular beam epitaxy; aluminum nitride; gallium nitride; two-dimensional electron gas; Hall measurements; atom probe
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Funding
- ONR
- NSF
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When grown at a high temperature (820 degrees C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (similar to 0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 degrees C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Omega/square, respectively.
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