Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
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Title
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 2, Pages 023117
Publisher
AIP Publishing
Online
2015-01-16
DOI
10.1063/1.4906060
References
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Related references
Note: Only part of the references are listed.- Growth control of epitaxial GeTe–Sb2Te3 films using a line-of-sight quadrupole mass spectrometer
- (2014) Karthick Perumal et al. JOURNAL OF CRYSTAL GROWTH
- Evidence for topological band inversion of the phase change material Ge2Sb2Te5
- (2013) Christian Pauly et al. APPLIED PHYSICS LETTERS
- Long-range crystal-lattice distortion fields of epitaxial Ge-Sb-Te phase-change materials
- (2013) Ferhat Katmis et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes
- (2012) P. Rodenbach et al. APPLIED PHYSICS LETTERS
- Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
- (2012) Taeyong Eom et al. CHEMISTRY OF MATERIALS
- Epitaxial phase-change materials
- (2012) Peter Rodenbach et al. Physica Status Solidi-Rapid Research Letters
- Physical origin of the resistance drift exponent in amorphous phase change materials
- (2011) Mattia Boniardi et al. APPLIED PHYSICS LETTERS
- Insight into the Growth and Control of Single-Crystal Layers of Ge–Sb–Te Phase-Change Material
- (2011) Ferhat Katmis et al. CRYSTAL GROWTH & DESIGN
- Interfacial phase-change memory
- (2011) R. E. Simpson et al. Nature Nanotechnology
- Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
- (2010) Mattia Boniardi et al. SOLID-STATE ELECTRONICS
- Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
- (2009) Daniele Ielmini et al. APPLIED PHYSICS LETTERS
- Phase Change Materials and Their Application to Nonvolatile Memories
- (2009) Simone Raoux et al. CHEMICAL REVIEWS
- Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study
- (2009) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs
- (2008) A. Redaelli et al. IEEE ELECTRON DEVICE LETTERS
- Chemical vapor deposition of chalcogenide materials for phase-change memories
- (2008) A. Abrutis et al. MICROELECTRONIC ENGINEERING
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