Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

Title
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 2, Pages 023117
Publisher
AIP Publishing
Online
2015-01-16
DOI
10.1063/1.4906060

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