Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

(2015) Fei Zhou et al.   APPLIED PHYSICS LETTERS

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

(2015) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

(2014) P. Shekhter et al.   APPLIED PHYSICS LETTERS

Physical mechanism of progressive breakdown in gate oxides

(2014) Felix Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures

(2012) F. Palumbo et al.   IEEE ELECTRON DEVICE LETTERS

Effect of H on interface properties of Al2O3/In0.53Ga0.47As

(2011) Zuoguang Liu et al.   APPLIED PHYSICS LETTERS

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

(2008) R. Pagano et al.   MICROELECTRONICS RELIABILITY