Single-charge transport in ambipolar silicon nanoscale field-effect transistors
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Single-charge transport in ambipolar silicon nanoscale field-effect transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 17, Pages 172101
Publisher
AIP Publishing
Online
2015-04-28
DOI
10.1063/1.4919110
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Ambipolar Phosphorene Field Effect Transistor
- (2014) Saptarshi Das et al. ACS Nano
- Charge state hysteresis in semiconductor quantum dots
- (2014) C. H. Yang et al. APPLIED PHYSICS LETTERS
- Ambipolar quantum dots in intrinsic silicon
- (2014) A. C. Betz et al. APPLIED PHYSICS LETTERS
- Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
- (2014) Dohun Kim et al. NATURE
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- (2014) E. Kawakami et al. Nature Nanotechnology
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
- (2013) Paul C. Spruijtenburg et al. APPLIED PHYSICS LETTERS
- Single hole transport in a silicon metal-oxide-semiconductor quantum dot
- (2013) R. Li et al. APPLIED PHYSICS LETTERS
- Electrical control of single hole spins in nanowire quantum dots
- (2013) V. S. Pribiag et al. Nature Nanotechnology
- Nature of Tunable HolegFactors in Quantum Dots
- (2013) N. Ares et al. PHYSICAL REVIEW LETTERS
- Silicon quantum electronics
- (2013) Floris A. Zwanenburg et al. REVIEWS OF MODERN PHYSICS
- Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
- (2012) J. C. H. Chen et al. APPLIED PHYSICS LETTERS
- Coherent singlet-triplet oscillations in a silicon-based double quantum dot
- (2012) B. M. Maune et al. NATURE
- Spin filling of valley–orbit states in a silicon quantum dot
- (2011) W H Lim et al. NANOTECHNOLOGY
- Embracing the quantum limit in silicon computing
- (2011) John J. L. Morton et al. NATURE
- Electron spin coherence exceeding seconds in high-purity silicon
- (2011) Alexei M. Tyryshkin et al. NATURE MATERIALS
- Hole spin relaxation in Ge–Si core–shell nanowire qubits
- (2011) Yongjie Hu et al. Nature Nanotechnology
- Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots
- (2010) M. Xiao et al. APPLIED PHYSICS LETTERS
- Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
- (2010) Madhu Thalakulam et al. APPLIED PHYSICS LETTERS
- Resonant tunnelling features in quantum dots
- (2010) C C Escott et al. NANOTECHNOLOGY
- Spin–orbit qubit in a semiconductor nanowire
- (2010) S. Nadj-Perge et al. NATURE
- Probe and control of the reservoir density of states in single-electron devices
- (2010) M. Möttönen et al. PHYSICAL REVIEW B
- Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
- (2009) E. P. Nordberg et al. APPLIED PHYSICS LETTERS
- Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot
- (2009) Floris A. Zwanenburg et al. NANO LETTERS
- Electron-Hole Crossover in Graphene Quantum Dots
- (2009) J. Güttinger et al. PHYSICAL REVIEW LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started