Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application
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Title
Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application
Authors
Keywords
Kissinger Equation, Raman Scatter Spectrum, Avrami Index, Neodymium Yttrium, Film Surface Roughness
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 121, Issue 3, Pages 1125-1131
Publisher
Springer Nature
Online
2015-09-12
DOI
10.1007/s00339-015-9470-z
References
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Related references
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- Materials for phase-change memory with elevated temperature stability
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- (2012) Mingcheng Sun et al. SCRIPTA MATERIALIA
- Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film
- (2012) Po-Hsiang Lee et al. THIN SOLID FILMS
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- (2011) R. E. Simpson et al. Nature Nanotechnology
- Characterizations of AgInSbTe and Its Nanocomposite Thin Films for Phase-Change Memory Applications
- (2010) Yu-Jen Huang et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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- Crystalline Amorphous Semiconductor Superlattice
- (2008) T. C. Chong et al. PHYSICAL REVIEW LETTERS
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