Study on the nitrogen-doped W-Sb-Te material for phase change memory application

Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory

(2014) Kun Ren et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Nucleation of metals by strong electric fields

(2012) M. Nardone et al.   APPLIED PHYSICS LETTERS

Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

(2012) Yegang Lu et al.   APPLIED PHYSICS LETTERS

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

(2012) Cheng Peng et al.   APPLIED PHYSICS LETTERS

Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

(2012) C. Peng et al.   ECS Solid State Letters

Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5

(2011) Eunae Cho et al.   JOURNAL OF APPLIED PHYSICS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Evidence of field induced nucleation in phase change memory

(2008) I. V. Karpov et al.   APPLIED PHYSICS LETTERS

Resonant bonding in crystalline phase-change materials

(2008) Kostiantyn Shportko et al.   NATURE MATERIALS

Field-induced nucleation in phase change memory

(2008) V. G. Karpov et al.   PHYSICAL REVIEW B