期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 24, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/24/245101
关键词
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资金
- MKE/KEIT [2006-S079-04]
Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al2O3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8V at the gate voltage of -10 to 12V, and 10(7) on/off ratio, and a gate leakage current of 10(-11) A.
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