Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies

Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

(2014) J. Dabrowski et al.   APPLIED PHYSICS LETTERS

Structural features of epitaxial graphene on SiC {0 0 0 1} surfaces

(2014) Wataru Norimatsu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

(2014) Leif I. Johansson et al.   Scientific Reports

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

(2013) Leif I. Johansson et al.   JOURNAL OF MATERIALS RESEARCH

High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC

(2013) E. Moreau et al.   PHYSICAL REVIEW B

Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

(2013) José Avila et al.   Scientific Reports

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

(2013) Leif Johansson et al.   Crystals

Epitaxial graphene on SiC(0001¯): Stacking order and interfacial structure

(2012) Xiaojun Weng et al.   APPLIED PHYSICS LETTERS

Correlation between (in)commensurate domains of multilayer epitaxial graphene grown on SiC($0 0 0\bar {1}$) and single layer electronic behavior

(2012) T G Mendes-de-Sa et al.   NANOTECHNOLOGY

Numerical studies of confined states in rotated bilayers of graphene

(2012) G. Trambly de Laissardière et al.   PHYSICAL REVIEW B

Unraveling the Intrinsic and Robust Nature of van Hove Singularities in Twisted Bilayer Graphene by Scanning Tunneling Microscopy and Theoretical Analysis

(2012) I. Brihuega et al.   PHYSICAL REVIEW LETTERS

Stacking of adjacent graphene layers grown on C-face SiC

(2011) L. I. Johansson et al.   PHYSICAL REVIEW B

Illuminating the dark corridor in graphene: Polarization dependence of angle-resolved photoemission spectroscopy on graphene

(2011) Isabella Gierz et al.   PHYSICAL REVIEW B

Topographic and electronic contrast of the graphene moiré on Ir(111) probed by scanning tunneling microscopy and noncontact atomic force microscopy

(2011) Zhixiang Sun et al.   PHYSICAL REVIEW B

Symmetry breaking in commensurate graphene rotational stacking: Comparison of theory and experiment

(2011) J. Hicks et al.   PHYSICAL REVIEW B

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

(2011) W. A. de Heer et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

(2010) E. Moreau et al.   APPLIED PHYSICS LETTERS

Localization of Dirac Electrons in Rotated Graphene Bilayers

(2010) G. Trambly de Laissardière et al.   NANO LETTERS

Quasifreestanding multilayer graphene films on the carbon face of SiC

(2010) D. A. Siegel et al.   PHYSICAL REVIEW B

Structural analysis of multilayer graphene via atomic moiré interferometry

(2010) David L. Miller et al.   PHYSICAL REVIEW B

Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range

(2010) S. Tanuma et al.   SURFACE AND INTERFACE ANALYSIS

Epitaxial graphene on SiC(0001) and \mathrm {SiC}(000\bar {1}) : from surface reconstructions to carbon electronics

(2009) U Starke et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Graphene growth by molecular beam epitaxy using a solid carbon source

(2009) E. Moreau et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

(2009) D. A. Siegel et al.   PHYSICAL REVIEW B

Atomic and electronic structure of monolayer graphene on6H-SiC(0001¯)(3×3): A scanning tunneling microscopy study

(2009) F. Hiebel et al.   PHYSICAL REVIEW B

First Direct Observation of a Nearly Ideal Graphene Band Structure

(2009) M. Sprinkle et al.   PHYSICAL REVIEW LETTERS

Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

(2009) F J Ferrer et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Morphology of graphene thin film growth on SiC(0001)

(2008) Taisuke Ohta et al.   NEW JOURNAL OF PHYSICS

Epitaxial graphene: a new material

(2008) Th. Seyller et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study

(2008) François Varchon et al.   PHYSICAL REVIEW B

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

(2008) K. V. Emtsev et al.   PHYSICAL REVIEW B

Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene

(2008) M. Orlita et al.   PHYSICAL REVIEW LETTERS

Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

(2008) J. Hass et al.   PHYSICAL REVIEW LETTERS