Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

Published 2009 View Full Article

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Title
Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 24, Issue 12, Pages 125014
Publisher
IOP Publishing
Online
2009-11-25
DOI
10.1088/0268-1242/24/12/125014
References
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