Article
Engineering, Electrical & Electronic
Weibing Yang, Ke Chen, Daniel Cunnane, Boris S. Karasik, XiaoXing Xi
Summary: The growth of ultrathin MgB2 films on C-terminated 6H-SiC substrate results in better surface smoothness and grain connectivity compared to films grown on Si-terminated substrate, providing a simple solution for high-quality ultrathin MgB2 films in electronic applications.
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
(2022)
Article
Chemistry, Physical
Hiroaki Shinya, Masataka Nakano, Noboru Ohtani
Summary: Different microscopy techniques were used to examine the step structure on the (000 (1) over bar )C facet of 4H-SiC boules grown with different nitrogen doping concentrations. The observations revealed characteristic surface features dependent on the nitrogen concentration, with the separation wavelength of step trains varying with nitrogen doping concentrations. The height of the step trains was found to be half unit-cell height and the separation undulation had a wavelength depending on nitrogen concentration.
Article
Physics, Condensed Matter
Ryotaro Sakakibara, Jianfeng Bao, Naoki Hayashi, Takahiro Ito, Hiroki Hibino, Wataru Norimatsu
Summary: The rotation angle of multilayer graphene on SiC (000 (1) over bar) can be controlled by changing the off angle of the SiC substrate. Graphene rotated by 30 degrees with respect to SiC becomes less dominant as the off angle towards the [11 (2) over bar0](SiC) direction increases, and instead, graphene rotated by 30 +/- 2.5 degrees appears. It was also found that the uniformity of the graphene rotation angle is relatively high on SiC substrates with a small off angle towards the [1 (1) over bar 00](SiC) direction.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Physics, Applied
E. Kodolitsch, A. Kabakow, V Sodan, M. Krieger, H. Weber, N. Tsavdaris
Summary: In this study, a triangular epitaxial defect is identified as a nucleation source for the growth of recombination-induced bar shaped stacking faults (BSSFs) in forward-biased 4H-SiC p-n diode test structures. Basal plane dislocations that converted into threading screw dislocations, located close to the surface of the epitaxial layer and included in the triangular defect, act as the nucleation source for the BSSFs. These BSSFs expand from the top towards the bottom of the epitaxial layer, which is a newly reported expansion mechanism.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Hua Zhou, Hui-Qiong Wang, Jin-Cheng Zheng, Xiao-Dan Wang, Yufeng Zhang, Junyong Kang, Lihua Zhang, Kim Kisslinger, Rui Wu, Jia-Ou Wang, Hai-Jie Qian, Kurash Ibrahim
Summary: This study investigates the heteroepitaxial and energy band structures of STO/ZnO interfaces, showing different azimuth orientations and rotation domains of STO films on ZnO substrates. The downward band structures at the STO/ZnO interfaces were confirmed by experimental and theoretical methods, indicating an asymmetry between STO/ZnO and ZnO/STO interfaces.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Y. Yang, K. H. Gao, W. J. Wang, G. Yu, Y. Sun, X. H. Zhang, Z. Q. Li
Summary: An anomalous carrier-concentration dependence of electron-electron interactions was observed in epitaxial graphene on SiC, offering a new route to control EEI in graphene.
Article
Chemistry, Multidisciplinary
Thi Thuy Nhung Nguyen, Stephen R. Power, Hrag Karakachian, Ulrich Starke, Christoph Tegenkamp
Summary: This study investigates the impact of edge and width variations of graphene nanoribbons on quantum confinement effects. The researchers found that regardless of the ribbon width, the band gaps near the edges of the nanoribbons are significantly reduced, and edge passivation plays a crucial role in determining the local electronic properties of epitaxial nanoribbons.
Article
Chemistry, Physical
Dominike P. de Andrade Deus, Joao Marcelo J. Lopes, Roberto H. Miwa
Summary: Heterostructures based on the stacking of graphene and hexagonal boron nitride (h-BN) on SiC(0001) substrate have been studied theoretically. The results show that h-BN encapsulation is energetically preferred below a single layer of graphene, leading to G/h-BN/SiC for bilayer systems and G/h-BN/G/SiC for trilayer systems. The electronic structure calculations reveal the preservation of graphene linear energy band dispersion in the bilayer systems, while the trilayer systems exhibit stacking-order-dependent electronic structures. Structural characterizations of these heterostructures were performed using simulations of core-level-shift and XANES spectroscopy, aiming to assist future experimental studies.
Article
Crystallography
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Summary: SiC is an excellent semiconductor material with high thermal conductivity, stable chemical properties, and high critical breakdown field strength. This paper investigates the epitaxial growth of SiC on n-type SiC substrates and analyzes the effects of growth temperature on the surface morphology of SiC epitaxial layers. The results show that higher growth temperature can lead to smoother surface and higher content of 4H-SiC.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Chemistry, Physical
Stefano Veronesi, Georg Pfusterschmied, Filippo Fabbri, Markus Leitgeb, Omer Arif, Daniel Arenas Esteban, Sara Bals, Ulrich Schmid, Stefan Heun
Summary: Nanoporous materials, such as graphene, with a three-dimensional porous structure, have shown great potential for various applications. In this study, we report the successful three-dimensional growth of graphene on a porousified crystalline 4H-SiC(0001) substrate. The high quality and uniformity of the graphene were confirmed by Transmission Electron Microscopy and Raman spectroscopy.
Article
Chemistry, Physical
Yasuhide Ohno, Ayumi Shimmen, Tomohiro Kinoshita, Masao Nagase
Summary: This study investigates energy harvesting using a flow of deionized water droplets on an epitaxial graphene film on a SiC substrate. The researchers obtained a single-crystal graphene film through annealing a 4H-SiC substrate. They tested the energy harvesting by using NaCl or HCl solutions on the graphene surface. The study confirmed the generation of a maximum voltage of 100 mV from the DI water flow on the epitaxial graphene film.
Article
Chemistry, Multidisciplinary
Ye-Chuang Han, Shi-Hao Yin, Jun-Rong Zheng, Yuan-Fei Hu, Li Sun, Li Zhang, Zhong-Qun Tian, Jun Yi
Summary: This study reports a thermal shock annealing method that enables fast and high-quality epitaxial growth of graphene on SiC. The method effectively mitigates structural defects and improves the flatness of graphene on SiC. The study also demonstrates the significant enhancement of surface-enhanced infrared absorption using graphene on SiC.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
J. Nishio, C. Ota, R. Iijima
Summary: During epitaxial growth of SiC, it is possible for Shockley partial dislocation pairs to convert from unexpandable to expandable combinations. Research has shown that certain unexpandable dislocations in the substrate can transform into expandable dislocations after growth, potentially impacting the reliability of SiC power devices.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Changlong Sun, Xin Xu, Cenlin Gui, Fuzhou Chen, Yian Wang, Shengzhou Chen, Minhua Shao, Jiahai Wang
Summary: Tailoring the interfacial interaction in SiC-based anode materials is achieved through the epitaxial growth of N doped graphene (NG) on SiC, which results in improved energy capacities and cycle lives. The NG@SiC heterojunction demonstrates intense interfacial interaction and an intrinsic electric field, allowing for a thorough understanding of electron/ion bridges and interatomic electron migration mechanisms. The interfacial interaction is controlled and tailored through interfacial coupled chemical bonds, enhancing charge transfer kinetics and preventing pulverization/aggregation.
NANO-MICRO LETTERS
(2023)
Article
Chemistry, Physical
Shivi Rathore, Dinesh Kumar Patel, Mukesh Kumar Thakur, Golam Haider, Martin Kalbac, Mattias Kruskopf, Chieh- Liu, Albert F. Rigosi, Randolph E. Elmquist, Chi-Te Liang, Po-Da Hong
Summary: Epitaxial graphene (EG) on 4H-SiC with an interfacial buffer layer (IBL) shows improved photoresponsivity, enabling positive and negative photoresponses for different laser excitations. The broadband binary photoresponse is mainly due to the energy band alignment at the IBL/EG interface and the sensitive work function of EG, resulting in a photoresponsivity of >10 A/W under certain conditions. These results pave the way for selective light-triggered logic devices based on EG and open new possibilities for broadband photodetection.
