Dynamical behavior of a dangling bond dimer on a hydrogenated semiconductor: Ge(001):H

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

(2015) Marek Kolmer et al.   Nanoscale

Si(100)-2 × 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

(2015) T.L. Yap et al.   SURFACE SCIENCE

Franck–Condon Blockade in a Single-Molecule Transistor

(2014) Enrique Burzurí et al.   NANO LETTERS

Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

(2014) Zahra Shaterzadeh-Yazdi et al.   PHYSICAL REVIEW B

Single-Electron Dynamics of an Atomic Silicon Quantum Dot on theH−Si(100)−(2×1)Surface

(2014) Marco Taucer et al.   PHYSICAL REVIEW LETTERS

Contacting a Conjugated Molecule with a Surface Dangling Bond Dimer on a Hydrogenated Ge(001) Surface Allows Imaging of the Hidden Ground Electronic State

(2013) Szymon Godlewski et al.   ACS Nano

Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment

(2013) Marek Kolmer et al.   APPLIED SURFACE SCIENCE

Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium

(2013) Marek Kolmer et al.   MICROELECTRONIC ENGINEERING

Surface-State Engineering for Interconnects on H-Passivated Si(100)

(2013) Mikaël Kepenekian et al.   NANO LETTERS

Reversible charge storage in a single silicon atom

(2013) Amandine Bellec et al.   PHYSICAL REVIEW B

Symmetry Dependence of Vibration-Assisted Tunneling

(2013) Niko Pavliček et al.   PHYSICAL REVIEW LETTERS

Quantum engineering at the silicon surface using dangling bonds

(2013) S. R. Schofield et al.   Nature Communications

Identifying passivated dynamic force microscopy tips on H:Si(100)

(2012) Peter Sharp et al.   APPLIED PHYSICS LETTERS

Electron transport through dangling-bond silicon wires on H-passivated Si(100)

(2012) Mikaël Kepenekian et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Energetics and stability of dangling-bond silicon wires on H passivated Si(100)

(2012) R Robles et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Dangling-bond logic gates on a Si(100)-(2 × 1)–H surface

(2012) Hiroyo Kawai et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

A single-atom transistor

(2012) Martin Fuechsle et al.   Nature Nanotechnology

Electronic properties of STM-constructed dangling-bond dimer lines on a Ge(001)-(2×1):H surface

(2012) Marek Kolmer et al.   PHYSICAL REVIEW B

Atomic-scale control of hydrogen bonding on a bare Si(100)-2×1 surface

(2012) Hatem Labidi et al.   PHYSICAL REVIEW B

Ohm's Law Survives to the Atomic Scale

(2012) B. Weber et al.   SCIENCE

Charge Control of Surface Dangling Bonds Using Nanoscale Schottky Contacts

(2011) Jason L. Pitters et al.   ACS Nano

Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

(2011) Jason L. Pitters et al.   JOURNAL OF CHEMICAL PHYSICS

Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

(2011) F Ample et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium

(2011) G. Scappucci et al.   NANO LETTERS

Spectroscopy of few-electron single-crystal silicon quantum dots

(2010) Martin Fuechsle et al.   Nature Nanotechnology

Dangling-bond charge qubit on a silicon surface

(2010) Lucian Livadaru et al.   NEW JOURNAL OF PHYSICS

Conductance decay of a surface hydrogen tunneling junction fabricated along a Si(001)-(2×1)-H atomic wire

(2010) Hiroyo Kawai et al.   PHYSICAL REVIEW B

Local Vibrational Excitation through Extended Electronic States at a Germanium Surface

(2010) Kota Tomatsu et al.   PHYSICAL REVIEW LETTERS

Nonlocal Activation of a Bistable Atom through a Surface State Charge-Transfer Process onSi(100)−(2×1):H

(2010) A. Bellec et al.   PHYSICAL REVIEW LETTERS

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

(2009) A. Fuhrer et al.   NANO LETTERS

Electronic properties of then-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

(2009) Amandine Bellec et al.   PHYSICAL REVIEW B

Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

(2009) M. Baseer Haider et al.   PHYSICAL REVIEW LETTERS