Reversible charge storage in a single silicon atom

Quantum engineering at the silicon surface using dangling bonds

(2013) S. R. Schofield et al.   Nature Communications

Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking

(2012) Chih-Yuan Lu   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Slab Thickness Effects for the Clean and Adsorbed Ge(001) Surface with Comparison to Si(001)

(2012) G. Ali Shah et al.   Journal of Physical Chemistry C

A single-atom transistor

(2012) Martin Fuechsle et al.   Nature Nanotechnology

Spectroscopic characterization of a single dangling bond on a bare Si(100)-c(4×2) surface forn- andp-type doping

(2012) M. Mantega et al.   PHYSICAL REVIEW B

Gating the Charge State of Single Molecules by Local Electric Fields

(2012) I. Fernández-Torrente et al.   PHYSICAL REVIEW LETTERS

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

(2011) Jason L. Pitters et al.   JOURNAL OF CHEMICAL PHYSICS

Controlling the Charge State of a Single Redox Molecular Switch

(2011) Thomas Leoni et al.   PHYSICAL REVIEW LETTERS

Ternary logic implemented on a single dopant atom field effect silicon transistor

(2010) M. Klein et al.   APPLIED PHYSICS LETTERS

Coulomb Energy Determination of a Single Si Dangling Bond

(2010) T. H. Nguyen et al.   PHYSICAL REVIEW LETTERS

Nonlocal Activation of a Bistable Atom through a Surface State Charge-Transfer Process onSi(100)−(2×1):H

(2010) A. Bellec et al.   PHYSICAL REVIEW LETTERS

Measurement of Fast Electron Spin Relaxation Times with Atomic Resolution

(2010) S. Loth et al.   SCIENCE

Tunable Kondo Effect in a Single Donor Atom

(2009) G. P. Lansbergen et al.   NANO LETTERS

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

(2009) Kuan Yen Tan et al.   NANO LETTERS

Electronic properties of then-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

(2009) Amandine Bellec et al.   PHYSICAL REVIEW B

Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

(2009) M. Baseer Haider et al.   PHYSICAL REVIEW LETTERS

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Dihydride dimer structures on the Si(100):H surface studied by low-temperature scanning tunneling microscopy

(2008) Amandine Bellec et al.   PHYSICAL REVIEW B

Probing the Carrier Capture Rate of a Single Quantum Level

(2007) M. Berthe et al.   SCIENCE