Band gap bowing and optical polarization switching in Al1−xGaxN alloys

Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys

(2014) S. Schulz et al.   APPLIED PHYSICS LETTERS

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

(2014) B. Neuschl et al.   JOURNAL OF APPLIED PHYSICS

Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study

(2013) Stefan Schulz et al.   Applied Physics Express

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

(2013) Shih-Wei Feng et al.   JOURNAL OF APPLIED PHYSICS

Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

(2013) V. N. Jmerik et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

(2013) Miguel A. Caro et al.   PHYSICAL REVIEW B

Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

(2012) C. Netzel et al.   APPLIED PHYSICS LETTERS

Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects

(2012) K. Schuh et al.   APPLIED PHYSICS LETTERS

Effect of pressure on the energy band gaps of wurtzite GaN and AlN and electronic properties of their ternary alloys AlxGa1−xN

(2012) Y. Oussaifi et al.   PHYSICA B-CONDENSED MATTER

Band gap bowing in quaternary nitride semiconducting alloys

(2011) I. Gorczyca et al.   APPLIED PHYSICS LETTERS

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

(2011) R. R. Pelá et al.   APPLIED PHYSICS LETTERS

Dielectric function and optical properties of quaternary AlInGaN alloys

(2011) E. Sakalauskas et al.   JOURNAL OF APPLIED PHYSICS

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Solid-State Lighting

(2011) Colin J. Humphreys   MRS BULLETIN

Electronic and optical properties of nonpolara-plane GaN quantum wells

(2010) S. Schulz et al.   PHYSICAL REVIEW B

Band parameters and strain effects in ZnO and group-III nitrides

(2010) Qimin Yan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Optical energies of AlInN epilayers

(2008) K. Wang et al.   JOURNAL OF APPLIED PHYSICS