Dielectric function and optical properties of quaternary AlInGaN alloys

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

(2010) T Lim et al.   IEEE ELECTRON DEVICE LETTERS

Spectroscopic ellipsometry of wurtzite ZnO and GaN: Examination of a special case

(2010) S. Shokhovets et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of InGaN by RF-MBE

(2010) A. Kraus et al.   JOURNAL OF CRYSTAL GROWTH

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

(2010) E Sakalauskas et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates

(2010) P. Schley et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical properties of InN grown on Si(111) substrate

(2010) E. Sakalauskas et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Valence-band splitting and optical anisotropy of AlN

(2010) G. Rossbach et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

(2010) N Ketteniss et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact

(2010) Han Cheng Lee et al.   SOLID-STATE ELECTRONICS

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase

(2009) C. Cobet et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Influence of strain on the band gap energy of wurtzite InN

(2009) P. Schley et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

(2009) I. Gorczyca et al.   PHYSICAL REVIEW B

High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

(2008) Sung-Nam Lee et al.   APPLIED PHYSICS LETTERS

Quaternary AlInGaN-based photodetectors

(2008) Y.D. Jhou et al.   IET Optoelectronics

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content

(2008) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

(2008) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

(2008) Sung-Nam Lee et al.   JOURNAL OF CRYSTAL GROWTH