4.1 Article

SiOx nanodots as a 'green gap' solution

Journal

JOURNAL OF NANOPHOTONICS
Volume 8, Issue -, Pages -

Publisher

SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JNP.8.083069

Keywords

photoluminescence; photodetector; thin film

Funding

  1. AICTE
  2. DST, Government of India

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We have synthesized SiOx nanodots (NDs) on a TiO2 dielectric using a glancing angle deposition technique. The SiOx NDs were 11 to 22 nm in diameter, which was confirmed by atomic force microscopy image. A green light emission (550 nm) was observed from SiOx NDs when excited with a xenon lamp of wavelength 322 nm. The emission was redshifted (similar to 6 nm) when the excitation was changed to 325 nm. The SiOx NDs-based detector showed a very low leakage current of similar to 9 nA(-0.05 V) and responded to the green light at 550 nm. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

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