Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

Published 2021 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 43, Issue 2, Pages 232-235

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2021-12-11

DOI

10.1109/led.2021.3134902

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