Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor
Authors
Keywords
-
Journal
Applied Physics Express
Volume 2, Issue -, Pages 055002
Publisher
IOP Publishing
Online
2009-04-24
DOI
10.1143/apex.2.055002

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.