RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

(2011) M. I. Medina-Montes et al.   JOURNAL OF ELECTRONIC MATERIALS

Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator

(2010) L. Zhang et al.   CURRENT APPLIED PHYSICS

Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition

(2009) Seokhwan Bang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of N[sub 2]O Plasma Treatment on the Performance of ZnO TFTs

(2008) K. Remashan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

(2008) Jaechul Park et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

(2008) Hoonha Jeon et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Comparison of Electrical, Optical, and Structural Properties of RF-Sputtered ZnO Thin Films Deposited Under Different Gas Ambients

(2008) Rajesh Das et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of thickness of ZnO active layer on ZnO-TFT's characteristics

(2007) J.H. Chung et al.   THIN SOLID FILMS