Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure

Effect of internal electric field on InAs/GaAs quantum dot solar cells

(2014) Naofumi Kasamatsu et al.   JOURNAL OF APPLIED PHYSICS

InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy

(2012) T. Sugaya et al.   APPLIED PHYSICS LETTERS

Will we exceed 50% efficiency in photovoltaics?

(2011) Antonio Luque   JOURNAL OF APPLIED PHYSICS

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(2011) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

(2010) W. G. Hu et al.   APPLIED PHYSICS LETTERS

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

(2010) Katsuhisa Yoshida et al.   APPLIED PHYSICS LETTERS

Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells

(2010) K. A. Sablon et al.   JOURNAL OF APPLIED PHYSICS

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

(2010) E. Antolín et al.   JOURNAL OF APPLIED PHYSICS

Fundamental losses in solar cells

(2010) Louise C. Hirst et al.   PROGRESS IN PHOTOVOLTAICS