Effect of internal electric field on InAs/GaAs quantum dot solar cells

InAs/GaAs quantum dot solar cell with an AlAs cap layer

(2013) F. K. Tutu et al.   APPLIED PHYSICS LETTERS

Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation

(2013) Yukihiro Harada et al.   JOURNAL OF APPLIED PHYSICS

One-dimensional miniband formation in closely stacked InAs/GaAs quantum dots

(2013) Akihiro Takahashi et al.   PHYSICAL REVIEW B

Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells

(2012) Yasushi Shoji et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation

(2012) Takashi Kita et al.   PHYSICAL REVIEW B

Absorption coefficient for the intraband transitions in quantum dot materials

(2012) Antonio Luque et al.   PROGRESS IN PHOTOVOLTAICS

Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots

(2011) Yuichiro Ikeuchi et al.   Applied Physics Express

Will we exceed 50% efficiency in photovoltaics?

(2011) Antonio Luque   JOURNAL OF APPLIED PHYSICS

Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots

(2011) Takashi Kita et al.   JOURNAL OF APPLIED PHYSICS

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(2011) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

(2011) Muhammad Usman et al.   PHYSICAL REVIEW B

Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

(2010) W. G. Hu et al.   APPLIED PHYSICS LETTERS

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

(2010) Greg Jolley et al.   APPLIED PHYSICS LETTERS

Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and quantum dot chains

(2010) Osamu Kojima et al.   JOURNAL OF APPLIED PHYSICS

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

(2010) E. Antolín et al.   JOURNAL OF APPLIED PHYSICS

Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays

(2010) Stanko Tomić   PHYSICAL REVIEW B

Fundamental losses in solar cells

(2010) Louise C. Hirst et al.   PROGRESS IN PHOTOVOLTAICS

Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

(2009) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

(2008) Stanko Tomić et al.   APPLIED PHYSICS LETTERS

Effect of strain compensation on quantum dot enhanced GaAs solar cells

(2008) S. M. Hubbard et al.   APPLIED PHYSICS LETTERS

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

(2008) Ryuji Oshima et al.   APPLIED PHYSICS LETTERS

Photoluminescence characteristics of quantum dots with electronic states interconnected along growth direction

(2008) Osamu Kojima et al.   JOURNAL OF APPLIED PHYSICS