Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Enhancing the Thermoelectric Properties of Layered Transition-Metal Dichalcogenides 2H-MQ2 (M = Mo, W; Q = S, Se, Te) by Layer Mixing: Density Functional Investigation

(2013) Changhoon Lee et al.   CHEMISTRY OF MATERIALS

Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

(2013) Ashok Kumar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Bonding Charge Density and Ultimate Strength of Monolayer Transition Metal Dichalcogenides

(2013) Junwen Li et al.   Journal of Physical Chemistry C

Two-Dimensional Nanosheets and Layered Hybrids of MoS2 and WS2 through Exfoliation of Ammoniated MS2 (M = Mo,W)

(2013) A. Anto Jeffery et al.   Journal of Physical Chemistry C

Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization

(2013) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Strain- and electric field-induced band gap modulation in nitride nanomembranes

(2013) Rodrigo G Amorim et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Stacking and electric field effects in atomically thin layers of GaN

(2013) Dongwei Xu et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Semiconductor to metal transition in bilayer transition metals dichalcogenidesMX2(M= Mo, W;X= S, Se, Te)

(2013) Ashok Kumar et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X=S, Se, Te)

(2013) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

(2013) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

(2013) Humberto Terrones et al.   Scientific Reports

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Effect of quantum confinement on electronic and dielectric properties of niobium dichalcogenides NbX2 (X=S, Se, Te)

(2012) Ashok Kumar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

A first principle Comparative study of electronic and optical properties of 1H – MoS2 and 2H – MoS2

(2012) Ashok Kumar et al.   MATERIALS CHEMISTRY AND PHYSICS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

A first principle study of interband transitions and electron energy loss in mono and bilayer graphene: Effect of external electric field

(2012) Brij Mohan et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

(2012) Peng Lu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy

(2010) Mingyuan Huang et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

(2009) T. M. G. Mohiuddin et al.   PHYSICAL REVIEW B

Subjecting a Graphene Monolayer to Tension and Compression

(2009) Georgia Tsoukleri et al.   Small

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

(2008) C. Lee et al.   SCIENCE