First principles study of metal contacts to monolayer black phosphorous

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Tunable optical properties of multilayer black phosphorus thin films

(2014) Tony Low et al.   PHYSICAL REVIEW B

Electrical contacts to monolayer black phosphorus: A first-principles investigation

(2014) Kui Gong et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Strain-Induced Gap Modification in Black Phosphorus

(2014) A. S. Rodin et al.   PHYSICAL REVIEW LETTERS

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

(2014) Fengnian Xia et al.   Nature Communications

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

(2014) Yongqing Cai et al.   Scientific Reports

Realistic Metal–Graphene Contact Structures

(2013) Cheng Gong et al.   ACS Nano

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity

(2013) Roi Levi et al.   NANO LETTERS

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Ab initiostudies on atomic and electronic structures of black phosphorus

(2010) Yanlan Du et al.   JOURNAL OF APPLIED PHYSICS

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

(2010) Yoon-Suk Kim et al.   PHYSICAL REVIEW B

Logic gates with a single graphene transistor

(2009) Roman Sordan et al.   APPLIED PHYSICS LETTERS

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

(2009) Pei Zhao et al.   NANO LETTERS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

Covalent radii revisited

(2008) Beatriz Cordero et al.   DALTON TRANSACTIONS

Nanowire Transistor Performance Limits and Applications

(2008) Wei Lu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Doping Graphene with Metal Contacts

(2008) G. Giovannetti et al.   PHYSICAL REVIEW LETTERS

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS