Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity

Title
Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity
Authors
Keywords
-
Journal
NANO LETTERS
Volume 13, Issue 8, Pages 3736-3741
Publisher
American Chemical Society (ACS)
Online
2013-07-31
DOI
10.1021/nl401675k

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now