期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4866872
关键词
-
资金
- Nanoelectronics Research Initiative
- NSF NASCENT
We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs. (C) 2014 AIP Publishing LLC.
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