Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

(2012) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

(2011) É. O’Connor et al.   APPLIED PHYSICS LETTERS

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

(2011) Yu Yuan et al.   IEEE ELECTRON DEVICE LETTERS

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

(2011) Steven J. Bentley et al.   IEEE ELECTRON DEVICE LETTERS

Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

(2011) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

(2011) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+MOS capacitors: The interface state model and beyond

(2011) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS