Field-effect control of tunneling barrier height by exploiting graphene's low density of states

Single-particle tunneling in doped graphene-insulator-graphene junctions

(2012) R. M. Feenstra et al.   JOURNAL OF APPLIED PHYSICS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films

(2011) Menno Bokdam et al.   NANO LETTERS

Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate

(2011) Neerav Kharche et al.   NANO LETTERS

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

(2011) B. Sachs et al.   PHYSICAL REVIEW B

Vertical field-effect transistor based on wave-function extension

(2011) A. Sciambi et al.   PHYSICAL REVIEW B

Stability of boron nitride bilayers: Ground-state energies, interlayer distances, and tight-binding description

(2011) R. M. Ribeiro et al.   PHYSICAL REVIEW B

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

(2011) Roman V. Gorbachev et al.   Small

Density of States and Zero Landau Level Probed through Capacitance of Graphene

(2010) L. A. Ponomarenko et al.   PHYSICAL REVIEW LETTERS