Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Manipulation of the graphene surface potential by ion irradiation

(2013) O. Ochedowski et al.   APPLIED PHYSICS LETTERS

Ballistic $I$– $V$ Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

(2013) Kartik Ganapathi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

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Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Ion irradiation tolerance of graphene as studied by atomistic simulations

(2012) E. H. Åhlgren et al.   APPLIED PHYSICS LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Effect of SiO2substrate on the irradiation-assisted manipulation of supported graphene: a molecular dynamics study

(2012) Shijun Zhao et al.   NANOTECHNOLOGY

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Accurate Measurement of Electron Beam Induced Displacement Cross Sections for Single-Layer Graphene

(2012) Jannik C. Meyer et al.   PHYSICAL REVIEW LETTERS

Unzipping and folding of graphene by swift heavy ions

(2011) S. Akcöltekin et al.   APPLIED PHYSICS LETTERS

Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

(2011) Shu-Jen Han et al.   IEEE ELECTRON DEVICE LETTERS

Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study

(2011) S. Mathew et al.   JOURNAL OF APPLIED PHYSICS

Effective mobility of single-layer graphene transistors as a function of channel dimensions

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Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions

(2011) Friedrich Aumayr et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

(2011) L. G. Cançado et al.   NANO LETTERS

A role for graphene in silicon-based semiconductor devices

(2011) Kinam Kim et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Electronic transport signatures of common defects in irradiated graphene-based systems

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Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene

(2011) E. H. Åhlgren et al.   PHYSICAL REVIEW B

Quantifying ion-induced defects and Raman relaxation length in graphene

(2010) M.M. Lucchese et al.   CARBON

Enhanced resistance of single-layer graphene to ion bombardment

(2010) J. J. Lopez et al.   JOURNAL OF APPLIED PHYSICS

Ion and electron irradiation-induced effects in nanostructured materials

(2010) A. V. Krasheninnikov et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates

(2010) P Joshi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Raman study of ion-induced defects inN-layer graphene

(2010) Ado Jorio et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

SRIM – The stopping and range of ions in matter (2010)

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Effects of ion bombardment on a two-dimensional target: Atomistic simulations of graphene irradiation

(2010) O. Lehtinen et al.   PHYSICAL REVIEW B

Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

(2010) E. H. Martins Ferreira et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Dielectric Screening Enhanced Performance in Graphene FET

(2009) Fang Chen et al.   NANO LETTERS

Operation of Graphene Transistors at Gigahertz Frequencies

(2008) Yu-Ming Lin et al.   NANO LETTERS

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS