Interface engineering through atomic dopants in HfO2-based gate stacks
Published 2013 View Full Article
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Title
Interface engineering through atomic dopants in HfO2-based gate stacks
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 11, Pages 114310
Publisher
AIP Publishing
Online
2013-09-20
DOI
10.1063/1.4821797
References
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Related references
Note: Only part of the references are listed.- Recent progress in ab initio simulations of hafnia-based gate stacks
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- Atomic mechanism of electric dipole formed at high-K: SiO2 interface
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- Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants
- (2011) Xuhui Luo et al. PHYSICAL REVIEW B
- Effective work function of metals interfaced with dielectrics: A first-principles study of the Pt-HfO2interface
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- Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
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- High-κ/Metal Gate Science and Technology
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- (2008) Eduardo Saiz et al. Annual Review of Materials Research
- Oxygen defect accumulation at Si:HfO2 interfaces
- (2008) C. Tang et al. APPLIED PHYSICS LETTERS
- Te-induced modulation of the Mo∕HfO2 interface effective work function
- (2008) Ka Xiong et al. APPLIED PHYSICS LETTERS
- A study of Hf vacancies at Si:HfO2 heterojunctions
- (2008) C. Tang et al. APPLIED PHYSICS LETTERS
- Impact of incorporated Al on the TiN/HfO[sub 2] interface effective work function
- (2008) Ka Xiong et al. JOURNAL OF APPLIED PHYSICS
- Pt effects in γ-Ni(Al)/α-Al2O3 adhesion
- (2008) Yong Jiang et al. JOURNAL OF MATERIALS SCIENCE
- Ab initiostudy of decohesion properties in oxide/metal systems
- (2008) J. I. Beltrán et al. PHYSICAL REVIEW B
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