Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

(2012) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Recent progress in ab initio simulations of hafnia-based gate stacks

(2012) H. Zhu et al.   JOURNAL OF MATERIALS SCIENCE

Ab initio calculation of effective work functions for a TiN/HfO2/SiO2/Si transistor stack

(2011) Pierre-Yves Prodhomme et al.   APPLIED PHYSICS LETTERS

Effective work function of metals interfaced with dielectrics: A first-principles study of the Pt-HfO2interface

(2011) H. Zhu et al.   PHYSICAL REVIEW B

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

(2010) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

(2009) E. Cartier et al.   APPLIED PHYSICS LETTERS

Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN

(2009) L. Tsetseris et al.   APPLIED PHYSICS LETTERS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band offsets and work function control in field effect transistors

(2009) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Modeling complexity of a complex gate oxide

(2009) Alexander A. Demkov et al.   MICROELECTRONIC ENGINEERING

Oxygen defect accumulation at Si:HfO2 interfaces

(2008) C. Tang et al.   APPLIED PHYSICS LETTERS

Segregation of oxygen vacancy at metal-HfO2 interfaces

(2008) Eunae Cho et al.   APPLIED PHYSICS LETTERS

The influence of Coulomb centers located in HfO[sub 2]/SiO[sub 2] gate stacks on the effective electron mobility

(2008) Sylvain Barraud et al.   JOURNAL OF APPLIED PHYSICS

Work function control at metal high-dielectric-constant gate oxide interfaces

(2007) K. Tse et al.   MICROELECTRONIC ENGINEERING