Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

Epitaxial graphene on SiC(0001) and \mathrm {SiC}(000\bar {1}) : from surface reconstructions to carbon electronics

(2009) U Starke et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

(2009) Glenn G. Jernigan et al.   NANO LETTERS

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems

(2009) Ulrich Starke   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

(2008) C. Riedl et al.   APPLIED PHYSICS LETTERS

The growth and morphology of epitaxial multilayer graphene

(2008) J Hass et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Graphene-substrate interaction on6H-SiC(0001¯): A scanning tunneling microscopy study

(2008) F. Hiebel et al.   PHYSICAL REVIEW B

Homogeneous large-area graphene layer growth on6H-SiC(0001)

(2008) C. Virojanadara et al.   PHYSICAL REVIEW B

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

(2008) K. V. Emtsev et al.   PHYSICAL REVIEW B