Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 85, Issue 20, Pages -
Publisher
American Physical Society (APS)
Online
2012-05-10
DOI
10.1103/physrevb.85.201402
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
- (2012) Dohun Kim et al. Nature Physics
- Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
- (2011) Desheng Kong et al. ACS Nano
- Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors
- (2011) Sungjae Cho et al. NANO LETTERS
- Manipulating surface states in topological insulator nanoribbons
- (2011) Faxian Xiu et al. Nature Nanotechnology
- Single valley Dirac fermions in zero-gap HgTe quantum wells
- (2011) B. Büttner et al. Nature Physics
- Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
- (2011) H. Steinberg et al. PHYSICAL REVIEW B
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological InsulatorBi2Se3
- (2011) J. G. Checkelsky et al. PHYSICAL REVIEW LETTERS
- Gate-tuned normal and superconducting transport at the surface of a topological insulator
- (2011) Benjamin Sacépé et al. Nature Communications
- Tuning the Fermi level in Bi2Se3 bulk materials and transport devices
- (2011) Zhi-yong Wang et al. Frontiers of Physics
- Tuning carrier type and density in Bi2Se3 by Ca-doping
- (2010) Zhiyong Wang et al. APPLIED PHYSICS LETTERS
- Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices
- (2010) Hadar Steinberg et al. NANO LETTERS
- Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
- (2010) Yi Zhang et al. Nature Physics
- Two-dimensional surface state in the quantum limit of a topological insulator
- (2010) James G. Analytis et al. Nature Physics
- Bulk Fermi surface coexistence with Dirac surface state inBi2Se3: A comparison of photoemission and Shubnikov–de Haas measurements
- (2010) James G. Analytis et al. PHYSICAL REVIEW B
- Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3
- (2010) J. Chen et al. PHYSICAL REVIEW LETTERS
- Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator
- (2010) Y. L. Chen et al. SCIENCE
- Topological surface states protected from backscattering by chiral spin texture
- (2009) Pedram Roushan et al. NATURE
- A tunable topological insulator in the spin helical Dirac transport regime
- (2009) D. Hsieh et al. NATURE
- Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
- (2009) Y. Xia et al. Nature Physics
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
- (2009) Haijun Zhang et al. Nature Physics
- Quantum Interference in Macroscopic Crystals of NonmetallicBi2Se3
- (2009) J. G. Checkelsky et al. PHYSICAL REVIEW LETTERS
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started