Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
出版年份 2012 全文链接
标题
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 12, Pages 124511
出版商
AIP Publishing
发表日期
2012-12-21
DOI
10.1063/1.4770324
参考文献
相关参考文献
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