Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5

A microscopic model for resistance drift in amorphous Ge2Sb2Te5

(2011) Jino Im et al.   CURRENT APPLIED PHYSICS

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory

(2011) Zijian Li et al.   IEEE ELECTRON DEVICE LETTERS

Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films

(2011) Jaeho Lee et al.   JOURNAL OF APPLIED PHYSICS

Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST

(2011) Anthony Debunne et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Double electrical percolation phenomenon during the crystallization of an amorphous Ge2Sb2Te5 thin film under continuous heating

(2010) Yunjung Choi et al.   APPLIED PHYSICS LETTERS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

(2010) Mattia Boniardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystallization of ion amorphized Ge2Sb2Te5 thin films in presence of cubic or hexagonal phase

(2010) R. De Bastiani et al.   JOURNAL OF APPLIED PHYSICS

Interpretation and consequences of Meyer-Neldel rule for conductivity of phase change alloys

(2010) S. D. Savransky et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

Effect of Heating Rate on the Activation Energy for Crystallization of Amorphous Ge[sub 2]Sb[sub 2]Te[sub 5] Thin Film

(2009) Yunjung Choi et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

(2009) Simone Lavizzari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

(2009) Pietro La Fata et al.   JOURNAL OF APPLIED PHYSICS

Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

(2009) Robert M. Shelby et al.   JOURNAL OF APPLIED PHYSICS

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

(2009) D. Ielmini et al.   MICROELECTRONIC ENGINEERING

Amorphous-fcc transition in Ge2Sb2Te5

(2009) S. Lombardo et al.   MICROELECTRONIC ENGINEERING

Nucleation, growth, and phase transformation mechanism of Ge2Sb2Te5thin films

(2009) Eun Tae Kim et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

(2009) B.-S. Lee et al.   SCIENCE

Crystallization properties of ultrathin phase change films

(2008) Simone Raoux et al.   JOURNAL OF APPLIED PHYSICS

In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides

(2008) Se Ahn Song et al.   ULTRAMICROSCOPY