Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

(2010) J.-L. Battaglia et al.   JOURNAL OF APPLIED PHYSICS

Effect of Doped Nitrogen on the Crystallization Behaviors of Ge[sub 2]Sb[sub 2]Te[sub 5]

(2010) Inseok Yang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Thermal conductivities and phase transition temperatures of various phase-change materials measured by the 3ω method

(2009) W. P. Risk et al.   APPLIED PHYSICS LETTERS

Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

(2009) Pietro La Fata et al.   JOURNAL OF APPLIED PHYSICS

Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells†

(2009) Roberto Fallica et al.   JOURNAL OF CHEMICAL AND ENGINEERING DATA

Amorphous-fcc transition in Ge2Sb2Te5

(2009) S. Lombardo et al.   MICROELECTRONIC ENGINEERING

Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory

(2008) Seung Wook Ryu et al.   APPLIED PHYSICS LETTERS

The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

(2008) J.P. Reifenberg et al.   IEEE ELECTRON DEVICE LETTERS