Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

(2011) Friso Jedema et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Growth Rate Determination through Automated TEM Image Analysis: Crystallization Studies of Doped SbTe Phase-Change Thin Films

(2010) Jasper L.M. Oosthoek et al.   MICROSCOPY AND MICROANALYSIS

Phase Change Materials

(2009) Simone Raoux   Annual Review of Materials Research

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Threshold field of phase change memory materials measured using phase change bridge devices

(2009) Daniel Krebs et al.   APPLIED PHYSICS LETTERS

Analysis of the electric field induced elemental separation of Ge2Sb2Te5 by transmission electron microscopy

(2009) Dongmin Kang et al.   APPLIED PHYSICS LETTERS

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

(2009) Tae-Youl Yang et al.   APPLIED PHYSICS LETTERS

Programming margin enlargement by material engineering for multilevel storage in phase-change memory

(2009) You Yin et al.   APPLIED PHYSICS LETTERS

Electric-Field-Induced Mass Movement of Ge[sub 2]Sb[sub 2]Te[sub 5] in Bottleneck Geometry Line Structures

(2009) Sung-Wook Nam et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effects of excess Sb on crystallization of δ-phase SbTe binary thin films

(2008) Min Soo Youm et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE