Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

(2011) Nicolas Reckinger et al.   APPLIED PHYSICS LETTERS

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

(2010) S. F. Feste et al.   JOURNAL OF APPLIED PHYSICS

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

(2009) Nicolas Reckinger et al.   APPLIED PHYSICS LETTERS

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

(2009) Wei-Yip Loh et al.   IEEE ELECTRON DEVICE LETTERS

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

(2009) G. Larrieu et al.   IEEE ELECTRON DEVICE LETTERS

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

(2009) E. Alptekin et al.   IEEE ELECTRON DEVICE LETTERS

Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation

(2008) Hoong-Shing Wong et al.   APPLIED PHYSICS LETTERS

Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation

(2008) Mantavya Sinha et al.   APPLIED PHYSICS LETTERS

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

(2008) Zhijun Qiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES