Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3285163
Keywords
boron alloys; cobalt alloys; contact resistance; Fermi level; germanium; interface states; iron alloys; magnesium compounds; MIS structures; Schottky barriers; spin polarised transport
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Funding
- Western Institute of Nanoelectronics (WIN)
- Intel Corporation
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We demonstrated that an ultrathin MgO layer between CoFeB and Ge modulated the Schottky barrier heights and contact resistances of spin diodes. We confirmed that, surprisingly, an insulating MgO layer significantly decreased the Schottky barrier heights and contact resistances of spin diodes on N+Ge, opposite to the increase observed for P+Ge. A 0.5 nm thick MgO layer on N+Ge decreases the Schottky barrier height from 0.47 to 0.05 eV and lowers the minimum contact resistance 100-fold to 1.5x10(-6) m(2). These results open a pathway for high efficient spin injection from ferromagnetic materials and semiconductors.
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