Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure

Temperature Dependence of Resistive Switching in Aluminum/Anodized Aluminum Film Structure

(2011) W. Zhu et al.   Nanoscience and Nanotechnology Letters

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

(2010) Jaehoon Song et al.   Applied Physics Express

Bistable resistance memory switching effect in amorphous InGaZnO thin films

(2010) C. H. Kim et al.   APPLIED PHYSICS LETTERS

Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

(2010) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

(2010) Inrok Hwang et al.   APPLIED PHYSICS LETTERS

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

(2010) Hsin-Hung Huang et al.   APPLIED PHYSICS LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

(2010) Yi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

(2010) Seunghyup Lee et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF APPLIED PHYSICS

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

(2009) Kazuki Nagashima et al.   APPLIED PHYSICS LETTERS

Current Transport Mechanism in High-κ Cerium Oxide Gate Dielectrics Grown on Germanium Substrates

(2009) M. S. Rahman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonpolar Resistance Switching in Anodic Oxide Alumina Films

(2009) Vadim Sh. Yalishev et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching in aluminum/anodized aluminum film structure without forming process

(2009) W. Zhu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching of aluminum oxide for flexible memory

(2008) Sungho Kim et al.   APPLIED PHYSICS LETTERS

A Temperature-Accelerated Method to Evaluate Data Retention of Resistive Switching Nonvolatile Memory

(2008) An Chen et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

(2008) M. Yin et al.   IEEE ELECTRON DEVICE LETTERS

Temperature dependence of voltage-controlled negative resistance and electroluminescence in Al–Al2O3–Au diodes

(2008) T. W. Hickmott   JOURNAL OF APPLIED PHYSICS