High current-induced degradation of AlGaN ultraviolet light emitting diodes
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High current-induced degradation of AlGaN ultraviolet light emitting diodes
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 10, Pages 103108
Publisher
AIP Publishing
Online
2011-06-03
DOI
10.1063/1.3590149
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
- (2010) Hideki Hirayama et al. Applied Physics Express
- Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
- (2010) M. Meneghini et al. APPLIED PHYSICS LETTERS
- Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes
- (2010) V. K. Malyutenko et al. APPLIED PHYSICS LETTERS
- Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
- (2010) N. I. Bochkareva et al. APPLIED PHYSICS LETTERS
- Current-induced degradation of high performance deep ultraviolet light emitting diodes
- (2010) Craig G. Moe et al. APPLIED PHYSICS LETTERS
- Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
- (2010) A. Pinos et al. JOURNAL OF APPLIED PHYSICS
- Physical mechanisms for hot-electron degradation in GaN light-emitting diodes
- (2010) K. K. Leung et al. JOURNAL OF APPLIED PHYSICS
- Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
- (2009) V. Liuolia et al. APPLIED PHYSICS LETTERS
- The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
- (2009) Di Zhu et al. APPLIED PHYSICS LETTERS
- Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
- (2009) M. Meneghini et al. APPLIED PHYSICS LETTERS
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
- (2009) M. L. Nakarmi et al. APPLIED PHYSICS LETTERS
- Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
- (2009) A. Pinos et al. APPLIED PHYSICS LETTERS
- Time-resolved luminescence studies of proton-implanted GaN
- (2009) A. Pinos et al. APPLIED PHYSICS LETTERS
- Deep-Ultraviolet Light-Emitting Diodes
- (2009) Michael S. Shur et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Screening dynamics of intrinsic electric field in AlGaN quantum wells
- (2008) A. Pinos et al. APPLIED PHYSICS LETTERS
- A Review on the Reliability of GaN-Based LEDs
- (2008) Matteo Meneghini et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Reliability of Deep-UV Light-Emitting Diodes
- (2008) M. Meneghini et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Tunneling entity in different injection regimes of InGaN light emitting diodes
- (2008) C. L. Reynolds et al. JOURNAL OF APPLIED PHYSICS
- Degradation of GaN-based quantum well light-emitting diodes
- (2008) L. X. Zhao et al. JOURNAL OF APPLIED PHYSICS
- Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects
- (2008) A Pinos et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
- (2008) Jun Liu et al. MICROELECTRONICS RELIABILITY
- Degradation of AlGaN-based ultraviolet light emitting diodes
- (2008) S. Sawyer et al. SOLID-STATE ELECTRONICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now